基于物理的mosfet和扩散电阻的有效宽度建模

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095) Pub Date : 2000-03-13 DOI:10.1109/ICMTS.2000.844426

C. McAndrew, S. Sekine, A. Cassagnes, Zhicheng Wu

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引用次数: 6

摘要

本文提出了有效的mosfet和扩散电阻直流电宽模型。对于由场氧化物定义的器件，模型考虑了几何宽度依赖于LOCOS效应和狗骨(或织带)效应，对于低掺杂电阻，模型考虑了有限掺杂源效应。这些模型是基于物理的，C/sub /spl infin//-几何连续函数，并显著改善了mosfet和电阻的几何建模。

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Physically-based effective width modeling of MOSFETs and diffused resistors

This paper presents effective DC electrical width models for MOSFETs and diffused resistors. The models account for the geometric width dependence on the LOCOS effect and the dog-bone (or webbing) effect, for devices defined by field oxide, and on the finite dopant source effect, for lowly doped resistors. The models are physically-based, C/sub /spl infin//-continuous functions of geometry, and significantly improve modeling of MOSFETs and resistors over geometry.

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来源期刊

ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095)

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