迈向以开槽光子晶体波导为特征的全封装高性能射频传感器

SPIE OPTO Pub Date : 2016-05-02 DOI:10.1117/12.2213557
Chi-Jui Chung, H. Subbaraman, Xingyu Zhang, Hai Yan, Jingdong Luo, A. Jen, R. Nelson, C. Lee, Ray T. Chen
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引用次数: 2

摘要

提出了一种基于电光聚合物填充硅槽光子晶体波导和领结天线的低损耗、高灵敏度x波段射频传感器。利用PCW中缓慢的光增强(>20X), EO聚合物的大EO系数(r33>200pm/V),以及二氧化硅衬底上领结天线的显著电场增强(>10000X),我们可以实现大于1000pm/V的大器件内EO系数,从而实现高性能射频波传感器。此外,采用片上Mach-Zender干涉仪(MZI)布局,工作在推拉配置下,进一步提高了传感器的灵敏度。此外,为了降低器件的插入损耗,提高器件的信噪比,本文还对反锥耦合器和开槽光子晶体波导进行了精心设计和讨论。最小可探测电磁功率密度降至2.05 mW/m2,对应的最小感应电场为0.61 V/m。与传统电子射频传感器相比,这种光子射频传感器具有数据吞吐量高、体积小、抗电磁干扰能力强等优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Towards a fully packaged high-performance RF sensor featuring slotted photonic crystal waveguides
A low loss and high sensitivity X-band RF sensor based on electro-optic (EO) polymer filled silicon slot photonic crystal waveguides (PCW) and bowtie antenna is proposed. By taking advantage of the slow light enhancementt in the PCW(>20X), large EO coefficient of the EO polymer(r33>200pm/V), as well as significant electric field enhancement of bowtie antenna on silicon dioxide substrate(>10000X), we can realize a large in-device EO coefficient over 1000pm/V so as to realize a high performance RF wave sensor. In addition, on-chip Mach-Zender interferometer (MZI) layout working under push-pull configuration is adopted to further increase the sensitivity of the sensor. Furthermore, inverse taper couplers and slotted photonic crystal waveguides are carefully designed and discussed in this paper to reduce the insertion loss of the device so as to increase the device signal-to-noise ratio. The minimum detectable electromagnetic power density is pushed down to 2.05 mW/m2, corresponding to a minimum sensing electric field of 0.61 V/m. This photonic RF sensor has several important advantages over conventional electronics RF sensors based on electrical scheme including high data throughput, compact in size, and great immunity to electromagnetic interference (EMI).
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