电压控制自旋电子存储器(VoCSM)具有超低能耗和高密度的潜力

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838495

H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, A. Kurobe

{"title":"电压控制自旋电子存储器(VoCSM)具有超低能耗和高密度的潜力","authors":"H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, A. Kurobe","doi":"10.1109/IEDM.2016.7838495","DOIUrl":null,"url":null,"abstract":"We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"41","resultStr":"{\"title\":\"Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density\",\"authors\":\"H. Yoda, N. Shimomura, Y. Ohsawa, S. Shirotori, Y. Kato, T. Inokuchi, Y. Kamiguchi, B. Altansargai, Y. Saito, K. Koi, H. Sugiyama, S. Oikawa, M. Shimizu, M. Ishikawa, K. Ikegami, A. Kurobe\",\"doi\":\"10.1109/IEDM.2016.7838495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"41\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838495\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838495","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 41

摘要

我们提出了一种新的基于自旋电子学的存储器，采用电压控制磁各向异性效应作为比特选择原理，自旋轨道扭矩效应作为写入原理。我们制作了原型结构，并成功地演示了针对该存储体系结构的写入方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

We propose a new spintronics-based memory employing the voltage-control-magnetic-anisotropy effect as a bit selecting principle and the spin-orbit-torque effect as a writing principle. We have fabricated the prototype structure, and successfully demonstrated the writing scheme specific to this memory architecture.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量