无结纳米线晶体管的有效沟道长度

2015 30th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2015-08-01 DOI:10.1109/SBMICRO.2015.7298144

R. Trevisoli, R. Doria, M. de Souza, M. Pavanello

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引用次数: 12

摘要

本工作的目的是分析栅极对源极/漏极区域的横向损耗对无结纳米线晶体管有效沟道长度的影响。通过仿真和实验结果分析了亚阈值区域的有效信道长度增长，表明JNT可以明显长于栅极长度。

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Effective channel length in Junctionless Nanowire Transistors

The aim of this work is to analyze the influence of the lateral depletion induced by the gate towards the source/drain regions on the effective channel length of Junctionless Nanowire Transistors. The effective channel length increase at the subthreshold regime is analyzed by means of simulations together with experimental results, showing that the JNT can be significantly longer than the gate length.

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2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)

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