利用载流子分离分析金属栅电极高k介电介质中的电荷捕获和击穿机理

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269430

W. Loh, B. Cho, M. Joo, M. Li, D. Chan, S. Mathew, D. Kwong

{"title":"利用载流子分离分析金属栅电极高k介电介质中的电荷捕获和击穿机理","authors":"W. Loh, B. Cho, M. Joo, M. Li, D. Chan, S. Mathew, D. Kwong","doi":"10.1109/IEDM.2003.1269430","DOIUrl":null,"url":null,"abstract":"Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a polarity dependent breakdown in high-k stacks. A model of charge trapping at different spatial locations in HfAlO/sub x/ with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation\",\"authors\":\"W. Loh, B. Cho, M. Joo, M. Li, D. Chan, S. Mathew, D. Kwong\",\"doi\":\"10.1109/IEDM.2003.1269430\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a polarity dependent breakdown in high-k stacks. A model of charge trapping at different spatial locations in HfAlO/sub x/ with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269430\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269430","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

利用载流子分离测量技术，我们能够区分两种不同的击穿机制:高k块启动和界面层启动。结果与统计威布尔分布相关，显示出高k堆叠中极性相关的击穿。提出了一个具有TaN栅极结构的HfAlO/sub x/中不同空间位置的电荷捕获模型，以解释电荷捕获特性和击穿机制的极性依赖性。

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Analysis of charge trapping and breakdown mechanism in high-k dielectrics with metal gate electrode using carrier separation

Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-k bulk initiated, and an interfacial layer initiated. The results correlate with the statistical Weibull distribution showing a polarity dependent breakdown in high-k stacks. A model of charge trapping at different spatial locations in HfAlO/sub x/ with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.

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IEEE International Electron Devices Meeting 2003

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