在5GHz LNA上集成了90nm RF CMOS技术(200GHz f/sub max/ - 150GHz f/sub T/ NMOS)

W. Jeamsaksiri, A. Mercha, J. Ramos, D. Linten, S. Thijs, S. Jenei, C. Detcheverry, P. Wambacq, R. Velghe, S. Decoutere
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引用次数: 16

摘要

在单片5GHz低噪声放大器上首次展示了90nm CMOS技术的低功率射频系统的潜力。该技术结合了一系列高Q无源元件和高射频性能70nm物理栅长nmosfet (200GHz f/sub max/ -150GHz f/sub T/),在最大测量频率范围内,功率增益/电流增益之比高于1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integration of a 90nm RF CMOS technology (200GHz f/sub max/ - 150GHz f/sub T/ NMOS) demonstrated on a 5GHz LNA
The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz f/sub max/ -150GHz f/sub T/) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.
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