W. Jeamsaksiri, A. Mercha, J. Ramos, D. Linten, S. Thijs, S. Jenei, C. Detcheverry, P. Wambacq, R. Velghe, S. Decoutere
{"title":"在5GHz LNA上集成了90nm RF CMOS技术(200GHz f/sub max/ - 150GHz f/sub T/ NMOS)","authors":"W. Jeamsaksiri, A. Mercha, J. Ramos, D. Linten, S. Thijs, S. Jenei, C. Detcheverry, P. Wambacq, R. Velghe, S. Decoutere","doi":"10.1109/VLSIT.2004.1345416","DOIUrl":null,"url":null,"abstract":"The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz f/sub max/ -150GHz f/sub T/) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.","PeriodicalId":297052,"journal":{"name":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Integration of a 90nm RF CMOS technology (200GHz f/sub max/ - 150GHz f/sub T/ NMOS) demonstrated on a 5GHz LNA\",\"authors\":\"W. Jeamsaksiri, A. Mercha, J. Ramos, D. Linten, S. Thijs, S. Jenei, C. Detcheverry, P. Wambacq, R. Velghe, S. Decoutere\",\"doi\":\"10.1109/VLSIT.2004.1345416\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz f/sub max/ -150GHz f/sub T/) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.\",\"PeriodicalId\":297052,\"journal\":{\"name\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-06-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2004.1345416\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2004.1345416","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration of a 90nm RF CMOS technology (200GHz f/sub max/ - 150GHz f/sub T/ NMOS) demonstrated on a 5GHz LNA
The potential for low power RF systems on chip of a 90nm CMOS technology is demonstrated for the first time on a monolithic 5GHz low noise amplifier. This technology combines a portfolio of high Q passive components with high RF performances 70nm physical gate length NMOSFETs (200GHz f/sub max/ -150GHz f/sub T/) presenting a ratio power gain/current gain higher than 1 up to the maximum measurement frequency.
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