具有1位分立功率控制的2.14 GHz GaN功率放大器

2010 IEEE Radio and Wireless Symposium (RWS) Pub Date : 2010-01-10 DOI:10.1109/RWS.2010.5434154

M. Mercanti, A. Cidronali, I. Magrini, G. Manes

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引用次数: 2

摘要

本文介绍了一种具有1位功率控制的GaN HEMT功率放大器，并提供了实验数据。它依赖于自适应栅极偏置控制方案所允许的功率组合的新概念。在2.1 GHz连续波下，离散功率控制技术可在最大回退功率为7 dB时实现线性系数3.3的效率提升，而最大输出功率为34 dBm，峰值漏极效率为35%。

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A 2.14 GHz GaN power amplifier with 1-bit discrete power control

This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control scheme. At 2.1 GHz CW the discrete power control technique enables a linear factor 3.3 efficiency enhancement at the maximum power back-off of 7 dB, while a maximum output power of 34 dBm and a peak drain efficiency of 35%.

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2010 IEEE Radio and Wireless Symposium (RWS)

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