绝缘体和半导体

R. Swendsen
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引用次数: 3

摘要

在真实材料的电子密度状态中出现的奇怪带隙的起源是晶格中原子核的规则排列产生了周期势。这会影响电子的能级,并在能谱中产生间隙。绝缘体和半导体的性质在现代技术中是非常重要的。它们很大程度上是由于电子遵循费米-狄拉克统计。在上一章讨论了自由电子的行为之后,这一章转向了当电子受到周期性电位时出现的性质,就像它们在晶体中一样。周期势导致了布洛赫定理、能带理论和带隙预测,而带隙是导致金属、绝缘体和半导体性质差异的原因。讨论了掺杂剂及其基本作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Insulators and Semiconductors
The origin of the strange band gaps that arise in the electron density of states in real materials is that the regular arrangement of the nuclei in a crystal lattice creates a periodic potential. This affects the energy levels of the electrons and gives rise to gaps in the energy spectrum. The properties of insulators and semiconductors are very important in modern technology. They are largely due to the Fermi–Dirac statistics obeyed by electrons. Following the discussion of the behavior of free electrons in the previous chapter, this one turns to the properties that emerge when electrons are subject to a periodic potential, as they are in a crystal. The periodic potential leads to Bloch's theorem, band theory, and the prediction of band gaps, which are responsible for the differences in the properties of metals, insulators, and semiconductors. Dopants and their basic effects are discussed.
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