高精度高压(±600V)隔离霍尔效应电流传感器的多物理场系统协同设计

R. Murugan, Jie Chen, Patrick Simmons, Steven Loveless, Tony Tang, Mohan Gupta, Tommy Santoyo, David Hatch, D. Trifonov, Klumpp Thatcher
{"title":"高精度高压(±600V)隔离霍尔效应电流传感器的多物理场系统协同设计","authors":"R. Murugan, Jie Chen, Patrick Simmons, Steven Loveless, Tony Tang, Mohan Gupta, Tommy Santoyo, David Hatch, D. Trifonov, Klumpp Thatcher","doi":"10.1109/ECTC32696.2021.00200","DOIUrl":null,"url":null,"abstract":"Hall-Effect current sensor is a transducer type, which senses the strength of a magnetic field caused by the detected current and changes its voltage output accordingly. Linear Hall-Effect integrated circuits (ICs) provide non-invasive, safe sensing, and detection of high DC, AC, and pulse current levels without dissipating additional power associated with resistive current-sensing methods. Typical applications of current sensing include overcurrent protection, monitoring and diagnostics, and closed-loop control in high-voltage, high-current systems. The current sensor options available for high-voltage applications are typically isolated shunt-based, closed-loop Hall-effect, or an in-package based Hall-Effect. The in-package Hall-Effect current sensor technology is preferred as market needs drive highly-integrated, high-performance, and cost-effective solutions. While beneficial, integration leads to multiple design complexities due to increasing system multiphysics interactions. This paper presents a multiphysics system (silicon + package + PCB) co-design of an in-package Hall-Effect current sensor IC that can be adopted early in the design process. The development and implementation of the coupled electrothermal and system modeling methodology are fully detailed. Silicon validation measurements on a high-precision, high-voltage (±600V) Hall-Effect current sensor device are presented that validate the integrity of the multiphysics system co-design modeling and analysis methodology.","PeriodicalId":351817,"journal":{"name":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Multiphysics System Co-Design of a High-Precision, High-Voltage (±600V) Isolated Hall-Effect Current Sensor\",\"authors\":\"R. Murugan, Jie Chen, Patrick Simmons, Steven Loveless, Tony Tang, Mohan Gupta, Tommy Santoyo, David Hatch, D. Trifonov, Klumpp Thatcher\",\"doi\":\"10.1109/ECTC32696.2021.00200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hall-Effect current sensor is a transducer type, which senses the strength of a magnetic field caused by the detected current and changes its voltage output accordingly. Linear Hall-Effect integrated circuits (ICs) provide non-invasive, safe sensing, and detection of high DC, AC, and pulse current levels without dissipating additional power associated with resistive current-sensing methods. Typical applications of current sensing include overcurrent protection, monitoring and diagnostics, and closed-loop control in high-voltage, high-current systems. The current sensor options available for high-voltage applications are typically isolated shunt-based, closed-loop Hall-effect, or an in-package based Hall-Effect. The in-package Hall-Effect current sensor technology is preferred as market needs drive highly-integrated, high-performance, and cost-effective solutions. While beneficial, integration leads to multiple design complexities due to increasing system multiphysics interactions. This paper presents a multiphysics system (silicon + package + PCB) co-design of an in-package Hall-Effect current sensor IC that can be adopted early in the design process. The development and implementation of the coupled electrothermal and system modeling methodology are fully detailed. Silicon validation measurements on a high-precision, high-voltage (±600V) Hall-Effect current sensor device are presented that validate the integrity of the multiphysics system co-design modeling and analysis methodology.\",\"PeriodicalId\":351817,\"journal\":{\"name\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC32696.2021.00200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 71st Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32696.2021.00200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

霍尔效应电流传感器是一种换能器类型,它能感知被检测电流所产生的磁场强度,并相应地改变其电压输出。线性霍尔效应集成电路(ic)提供非侵入性,安全的传感和检测高直流,交流和脉冲电流水平,而不消耗与电阻电流传感方法相关的额外功率。电流传感的典型应用包括过流保护、监测和诊断以及高压、大电流系统中的闭环控制。目前可用于高压应用的传感器选项通常是基于隔离分流,闭环霍尔效应或基于封装的霍尔效应。封装内霍尔效应电流传感器技术是首选,因为市场需要驱动高度集成,高性能和经济高效的解决方案。虽然集成是有益的,但由于系统多物理场相互作用的增加,集成导致了多重设计复杂性。本文提出了一种多物理场系统(硅+封装+ PCB)协同设计的封装内霍尔效应电流传感器IC,可以在设计过程中早期采用。详细介绍了电热耦合系统建模方法的开发和实现。在高精度高压(±600V)霍尔效应电流传感器器件上进行了硅验证测量,验证了多物理场系统协同设计建模和分析方法的完整性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Multiphysics System Co-Design of a High-Precision, High-Voltage (±600V) Isolated Hall-Effect Current Sensor
Hall-Effect current sensor is a transducer type, which senses the strength of a magnetic field caused by the detected current and changes its voltage output accordingly. Linear Hall-Effect integrated circuits (ICs) provide non-invasive, safe sensing, and detection of high DC, AC, and pulse current levels without dissipating additional power associated with resistive current-sensing methods. Typical applications of current sensing include overcurrent protection, monitoring and diagnostics, and closed-loop control in high-voltage, high-current systems. The current sensor options available for high-voltage applications are typically isolated shunt-based, closed-loop Hall-effect, or an in-package based Hall-Effect. The in-package Hall-Effect current sensor technology is preferred as market needs drive highly-integrated, high-performance, and cost-effective solutions. While beneficial, integration leads to multiple design complexities due to increasing system multiphysics interactions. This paper presents a multiphysics system (silicon + package + PCB) co-design of an in-package Hall-Effect current sensor IC that can be adopted early in the design process. The development and implementation of the coupled electrothermal and system modeling methodology are fully detailed. Silicon validation measurements on a high-precision, high-voltage (±600V) Hall-Effect current sensor device are presented that validate the integrity of the multiphysics system co-design modeling and analysis methodology.
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