2.35μm以上硅的克尔非线性

2011 IEEE Photonics Society Summer Topical Meeting Series Pub Date : 2011-07-18 DOI:10.1109/PHOSST.2011.6000043

S. Zlatanović, F. Gholami, A. Simic, L. Liu, N. Alic, M. Nezhad, Y. Fainman, S. Radic

{"title":"2.35μm以上硅的克尔非线性","authors":"S. Zlatanović, F. Gholami, A. Simic, L. Liu, N. Alic, M. Nezhad, Y. Fainman, S. Radic","doi":"10.1109/PHOSST.2011.6000043","DOIUrl":null,"url":null,"abstract":"We present measurements of χ(3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10−18 m2/W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.","PeriodicalId":273355,"journal":{"name":"2011 IEEE Photonics Society Summer Topical Meeting Series","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Kerr nonlinearity in silicon beyond 2.35μm\",\"authors\":\"S. Zlatanović, F. Gholami, A. Simic, L. Liu, N. Alic, M. Nezhad, Y. Fainman, S. Radic\",\"doi\":\"10.1109/PHOSST.2011.6000043\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present measurements of χ(3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10−18 m2/W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.\",\"PeriodicalId\":273355,\"journal\":{\"name\":\"2011 IEEE Photonics Society Summer Topical Meeting Series\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Photonics Society Summer Topical Meeting Series\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHOSST.2011.6000043\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Photonics Society Summer Topical Meeting Series","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2011.6000043","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们给出了硅在2.35 ~ 2.75μm区间的χ(3)测量结果，显示Kerr系数接近1×10−18 m2/W。结果清楚地表明硅是中红外非线性过程的一个有前途的平台。

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Kerr nonlinearity in silicon beyond 2.35μm

We present measurements of χ⁽³⁾ in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10⁻¹⁸ m²/W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.

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2011 IEEE Photonics Society Summer Topical Meeting Series

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