静态噪声边缘的统计分析

2015 European Conference on Circuit Theory and Design (ECCTD) Pub Date : 2015-08-01 DOI:10.1109/ECCTD.2015.7300090

Valeriu Beiu, M. Tache

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引用次数: 2

摘要

本文给出了对逆变器SNM(作为任何SRAM位单元的基本元素)进行统计分析的初步结果。结果具有统计意义，因为概率计算准确，并且应该导致更精确，更快，更好的产量估计。与蒙特卡罗模拟的比较支持这种说法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Statistical analysis of static noise margins

This paper presents preliminary results of a statistical analysis of the SNM of inverters (as the basic element of any SRAM bit cell). Results are statistical meaningful as probabilities are calculated accurately, and should lead to more precise, faster, and better yield estimates. Comparisons with Monte Carlo simulations are supporting such claims.

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来源期刊

2015 European Conference on Circuit Theory and Design (ECCTD)

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