基于动态复制的5倍改进负载调节的全条件稳定LDO调节器

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8706070

Guanhua Wang, Chenchang Zhan, Junyao Tang, Ning Zhang

{"title":"基于动态复制的5倍改进负载调节的全条件稳定LDO调节器","authors":"Guanhua Wang, Chenchang Zhan, Junyao Tang, Ning Zhang","doi":"10.1109/CICTA.2018.8706070","DOIUrl":null,"url":null,"abstract":"An NMOS LDO regulator using a dynamic replica to significantly improve the regulation precision is presented. By sensing the load current and dynamically adjusting the replica current, the power transistor is biased properly to improve regulation without compromising the all-condition stability of a classical fixed-replica regulator. The proposed LDO regulator is implemented in a 0.18-μm CMOS process, occupying an active chip area of 0.039 mm2. With 1.2 V input and 1.1 V nominal output voltage, the proposed design achieves 5 times improved load regulation, at the same time demonstrating stable and fast transient responses over the wide load capacitance range from 0 to virtually infinity.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dynamic-Replica-Based All-Condition-Stable LDO Regulator with 5X Improved Load Regulation\",\"authors\":\"Guanhua Wang, Chenchang Zhan, Junyao Tang, Ning Zhang\",\"doi\":\"10.1109/CICTA.2018.8706070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An NMOS LDO regulator using a dynamic replica to significantly improve the regulation precision is presented. By sensing the load current and dynamically adjusting the replica current, the power transistor is biased properly to improve regulation without compromising the all-condition stability of a classical fixed-replica regulator. The proposed LDO regulator is implemented in a 0.18-μm CMOS process, occupying an active chip area of 0.039 mm2. With 1.2 V input and 1.1 V nominal output voltage, the proposed design achieves 5 times improved load regulation, at the same time demonstrating stable and fast transient responses over the wide load capacitance range from 0 to virtually infinity.\",\"PeriodicalId\":186840,\"journal\":{\"name\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICTA.2018.8706070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种采用动态复制的NMOS LDO调节器，可显著提高其调节精度。通过感知负载电流并动态调整副本电流，在不影响经典固定副本稳压器的全条件稳定性的前提下，对功率晶体管进行适当的偏置，从而提高稳压性能。所提出的LDO稳压器采用0.18 μm CMOS工艺实现，占据0.039 mm2的有源芯片面积。在1.2 V输入电压和1.1 V标称输出电压下，所提出的设计实现了5倍的负载调节，同时在从0到几乎无穷大的宽负载电容范围内表现出稳定和快速的瞬态响应。

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Dynamic-Replica-Based All-Condition-Stable LDO Regulator with 5X Improved Load Regulation

An NMOS LDO regulator using a dynamic replica to significantly improve the regulation precision is presented. By sensing the load current and dynamically adjusting the replica current, the power transistor is biased properly to improve regulation without compromising the all-condition stability of a classical fixed-replica regulator. The proposed LDO regulator is implemented in a 0.18-μm CMOS process, occupying an active chip area of 0.039 mm2. With 1.2 V input and 1.1 V nominal output voltage, the proposed design achieves 5 times improved load regulation, at the same time demonstrating stable and fast transient responses over the wide load capacitance range from 0 to virtually infinity.

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来源期刊

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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