双磁二极管正反肖特基结的研究

2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS) Pub Date : 2012-03-05 DOI:10.1109/NEMS.2012.6196847

T. Phetchakul, W. Luanatikomkul, W. Yamwong, A. Poyai

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引用次数: 1

摘要

本文介绍了一种用于感应磁场的肖特基二极管。该结构与同一组已报道的双磁二极管结构相同。该装置可对磁场器件进行正向偏置和反向偏置。在1.93 μA电流下，正向偏置的灵敏度为0.8 mV/T，在13.49 pA电流下，反向偏置的灵敏度为6 nV/T (ΔVo/ΔB)。两种工作模式显示线性，其中电子是唯一类型的载流子。介绍了正向和反向操作模式的机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The study of forward and reverse schottky junction for dual magnetodiode

This paper presents schottky diode for sensing magnetic field. The structure is the same as dual magnetodiode that had been reported by the same group. The device can operate both in forward and reverse biasing for magnetic field device. The sensitivity (ΔVo/ΔB) by simulation of forward bias is 0.8 mV/T at the current 1.93 μA and reverse bias is 6 nV/T at the current 13.49 pA . Two modes of operation show linearity which electron is the only type of carrier. The mechanism of forward and reverse modes of operation are described.

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2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

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