1-2微米范围内的偏置辅助光发射

1977 International Electron Devices Meeting Pub Date : 1900-01-01 DOI:10.1109/IEDM.1977.189289

J. Escher, P. Gregory, S. Hyder, Y. Houng, G. Antypas

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引用次数: 2

摘要

本文介绍了一种利用转移电子效应的新型偏置辅助光电阴极的光电发射实验数据。阴极为异质结构，采用晶格匹配的InP-InGaAsP合金。在超高真空实验光发射系统中，在1.7微米阈值范围内达到1.0%的反射模式产率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Bias-assisted photoemission in the 1-2 micron range

Experimental photoemission data are presented on a new type of bias-assisted photocathode employing the transferred-electron effect. The cathodes are heterostructures employing lattice-matched InP-InGaAsP alloys. Reflection mode yields up to 1.0% out to 1.7-micron threshold have been achieved in an ultra-high vacuum experimental photoemission system.

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1977 International Electron Devices Meeting

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