亚微米BiCMOS技术中的30v线路驱动器

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509449

M. Aliahmad, C. Salama

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引用次数: 4

摘要

本文介绍了一种用于电信应用的30v线路驱动器。该电路(0.3 mm/sup 2/ in面积)采用5 V 0.8 /spl mu/m BiCMOS工艺，采用与低压技术完全兼容的30 V扩展漏极MOS器件。该设计采用准电流镜输出级，能够在空闲电流小于1 mA的情况下向负载提供高达30 mA的电流。线路驱动器的带宽为2mhz，相位裕度为45。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 30 V line driver in submicron BiCMOS technology

This paper presents a 30 V line driver for telecommunication applications. The circuit (0.3 mm/sup 2/ in area) is implemented in a 5 V 0.8 /spl mu/m BiCMOS process using 30 V extended-drain MOS devices fully compatible with low voltage technology. The design uses a Quasi-Current Mirror output stage and is capable of delivering up to 30 mA to the load with an idle current of less than 1 mA. The line driver exhibits a bandwidth of 2 MHz with a phase margin of 45.

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来源期刊

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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