基于26 ghz共生三次谐波振荡器的FMCW雷达用16nm CMOS 77/79 ghz频率发生器

F. Kuo, Zhirui Zong, H. Chen, Lan-chou Cho, C. Jou, Mark Chen, R. Staszewski
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引用次数: 2

摘要

本文提出了一种用于双频段雷达系统的数字控制频率发生器,该频率发生器针对16nm FinFET CMOS进行了优化。它基于21%宽调谐范围,精细分辨率的DCO,只有可切换的金属电容器。三次谐波升压DCO同时产生22.5 - 28ghz和足够强的68 - 84ghz信号,以满足近距离雷达(SRR)和中/远程雷达(M/LRR)的要求。20.2 mW的DCO在77 GHz的1 MHz偏置下发射-97 dBc/Hz,同时完全满足金属密度规则。它占地0.07 mm2,因此功耗降低43%,面积减少47%。与现有技术相比,相位噪声和fmt(带调谐范围的品质系数)分别提高了1.8 dB和0.2 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 77/79-GHz Frequency Generator in 16-nm CMOS for FMCW Radar Applications Based on a 26-GHz Oscillator with Co-Generated Third Harmonic
This paper presents a digitally controlled frequency generator for dual frequency-band radar system that is optimized for 16 nm FinFET CMOS. It is based on a 21% wide tuning range, fine-resolution DCO with only switchable metal capacitors. A third-harmonic boosting DCO simultaneously generates 22.5–28 GHz and sufficiently strong 68–84 GHz signals to satisfy short-range radar (SRR) and medium/long range radar (M/LRR) requirements. The 20.2 mW DCO emits -97 dBc/Hz at 1 MHz offset from 77 GHz, while fully satisfying metal density rules. It occupies 0.07 mm2, thus demonstrating both 43% power and 47% area reductions. The phase noise and FoMT (figure-of-merit with tuning range) are improved by 1.8 dB and 0.2 dB, respectively, compared to state-of-the-art.
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