制备晶体硅太阳能电池用p+发射体的直流溅射外延

2016 5th International Symposium on Next-Generation Electronics (ISNE) Pub Date : 2016-05-04 DOI:10.1109/ISNE.2016.7543327

W. Yeh, H. Moriyama

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引用次数: 0

摘要

首次在315℃的溅射外延条件下，在n型Si(100)衬底上生长p+-Si薄膜作为发射层制备了单晶硅体太阳能电池。可见光波长下的内部量子效率(IQE)大于95%，即使没有表面纹理和增透膜，短路电流也高达21 mA/cm2。

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DC sputter epitaxy of p+-emitters for fabrication of crystalline-Si solar cells

Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.

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2016 5th International Symposium on Next-Generation Electronics (ISNE)

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