{"title":"制备晶体硅太阳能电池用p+发射体的直流溅射外延","authors":"W. Yeh, H. Moriyama","doi":"10.1109/ISNE.2016.7543327","DOIUrl":null,"url":null,"abstract":"Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC sputter epitaxy of p+-emitters for fabrication of crystalline-Si solar cells\",\"authors\":\"W. Yeh, H. Moriyama\",\"doi\":\"10.1109/ISNE.2016.7543327\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.\",\"PeriodicalId\":127324,\"journal\":{\"name\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 5th International Symposium on Next-Generation Electronics (ISNE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISNE.2016.7543327\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISNE.2016.7543327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
DC sputter epitaxy of p+-emitters for fabrication of crystalline-Si solar cells
Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.