缩放极限下的设备物理:什么重要?(场效应管)

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269398

M. Lundstrom

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引用次数: 39

摘要

本文回顾了我们在利用理论和模拟来理解纳米级mosfet器件物理方面所做的努力。讨论了mosfet在缩放极限处的基本物理特性，并确定了限制器件性能和最终缩放的未解决的理论问题和技术问题。

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Device physics at the scaling limit: what matters? [MOSFETs]

This paper reviews our efforts to use theory and simulation to understand the device physics of nanoscale MOSFETs. The essential physics of MOSFETs at the scaling limit are discussed, and unresolved theoretical issues and technological ones that limit device performance and ultimate scaling are identified.

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IEEE International Electron Devices Meeting 2003

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