T. Hanyu, H. Kimura, M. Kameyama, Y. Fujimori, T. Nakamura, H. Takasu
{"title":"基于铁电的细粒度流水线VLSI计算功能通栅","authors":"T. Hanyu, H. Kimura, M. Kameyama, Y. Fujimori, T. Nakamura, H. Takasu","doi":"10.1109/ISSCC.2002.993009","DOIUrl":null,"url":null,"abstract":"The state-transition scheme of remnant polarization in a ferroelectric capacitor performs storage and switching functions simultaneously with a functional pass-gate. As an example of fine-grain pipelined VLSI computation, a 250 MHz 54/spl times/54 b pipelined multiplier has 2.5 W estimated power dissipation in a 0.6 /spl mu/m ferroelectric/CMOS technology.","PeriodicalId":423674,"journal":{"name":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","volume":"3 5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Ferroelectric-based functional pass-gate for fine-grain pipelined VLSI computation\",\"authors\":\"T. Hanyu, H. Kimura, M. Kameyama, Y. Fujimori, T. Nakamura, H. Takasu\",\"doi\":\"10.1109/ISSCC.2002.993009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The state-transition scheme of remnant polarization in a ferroelectric capacitor performs storage and switching functions simultaneously with a functional pass-gate. As an example of fine-grain pipelined VLSI computation, a 250 MHz 54/spl times/54 b pipelined multiplier has 2.5 W estimated power dissipation in a 0.6 /spl mu/m ferroelectric/CMOS technology.\",\"PeriodicalId\":423674,\"journal\":{\"name\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"volume\":\"3 5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2002.993009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2002.993009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ferroelectric-based functional pass-gate for fine-grain pipelined VLSI computation
The state-transition scheme of remnant polarization in a ferroelectric capacitor performs storage and switching functions simultaneously with a functional pass-gate. As an example of fine-grain pipelined VLSI computation, a 250 MHz 54/spl times/54 b pipelined multiplier has 2.5 W estimated power dissipation in a 0.6 /spl mu/m ferroelectric/CMOS technology.