MOS技术中DCG-FGT及其等效电路的比较研究

A. Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour
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引用次数: 0

摘要

本文对双控门浮栅晶体管(DCG-FGT)及其由标准件组成的等效电路进行了比较。我们通过电子模拟器(ELDO)下的测量和仿真证明了DCG-FGT的优势。用标准MOS技术再现DCG-FGT工作模式并不容易。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of comparison between the DCG-FGT and its equivalent circuit in MOS technology
In this paper, a comparison between the DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) and its equivalent circuit composed of standard components is proposed. We demonstrate the DCG-FGT advantages with measurement and simulations under electrical simulator (ELDO). It is not easily to reproduce the DCG-FGT operating mode with standard MOS technology.
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