仪表放大器设计:CMOS忆阻和CMOS实现的比较

Ulzhan Bassembek, O. Krestinskaya
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引用次数: 1

摘要

摘要:仪表放大器(InAmp)是一种用于测试和精度测量的电子器件。然而,InAmp的缺点是工作增益范围有限,片上面积大,功耗高。本文研究了用忆阻器件代替CMOS晶体管和电阻在InAmp设计中的效果。初步仿真结果表明,与原始CMOS InAmp设计相比,在CMOS InAmp设计中应用忆阻器可以减少片上面积和功耗。利用理想长通道CMOS晶体管模型进行了仿真,验证了设计理念。我们演示了在设计中使用忆阻器件提高InAmp增益的可能性。此外,还提供了温度变化的可变性分析和InAmp性能,证明了InAmp在大温度范围内工作的改善。此外,进行了噪声灵敏度分析,表明与原始CMOS设计相比,输出噪声显着降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Instrumentation Amplifier Design: Comparison of CMOS-Memristive and CMOS Implementations
Abstract-Instrumentation Amplifier (InAmp) is an electronic device used in many applications for testing and accuracy measurements. However, the drawbacks of InAmp include limited operation gain range, large on-chip area and high power consumption. In this paper, the results of replacing CMOS transistors and resistors with memristive devices in InAmp design are investigated. The preliminary simulation results show that the application of memristors in CMOS InAmp design has led to the reduction of on-chip area and power consumption, comparing to the original CMOS InAmp design. The simulations are performed using ideal long-channel CMOS transistor model to prove the design concept. We demonstrate the possibility to improve InAmp gain using memristive devices in the design. Furthermore, variability analysis and InAmp performance with respect to the temperature variation is provided, demonstrating the improvement of InAmp operation in a large temperature range. In addition, the noise sensitivity analysis is performed, showing that the output noise is significantly decreased comparing to the original CMOS design.
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