高产量的单片q波段MESFET压控振荡器

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers Pub Date : 1992-06-01 DOI:10.1109/MCS.1992.185997

S. Martin, Shirley A. Meyer, E. Reese, K. Salzman

{"title":"高产量的单片q波段MESFET压控振荡器","authors":"S. Martin, Shirley A. Meyer, E. Reese, K. Salzman","doi":"10.1109/MCS.1992.185997","DOIUrl":null,"url":null,"abstract":"The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Highly producible monolithic Q-band MESFET VCO\",\"authors\":\"S. Martin, Shirley A. Meyer, E. Reese, K. Salzman\",\"doi\":\"10.1109/MCS.1992.185997\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.185997\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.185997","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

作者描述了一种高度集成的全单片q带压控振荡器(VCO)，该振荡器建立在均匀掺杂的外延生长衬底上，使用0.35 μ m栅极。这种基于fet的振荡器在40 GHz频率下提供大于90 mW的输出功率，调谐带宽为2.8 GHz。通过集成变容管实现调谐。一个四级缓冲放大器和所有的偏置网络已包括在芯片上，以尽量减少由于装配公差和负载变化的性能变化。

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Highly producible monolithic Q-band MESFET VCO

The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.<>

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来源期刊

IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers

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