测量离子停止功率的测试结构

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766240

H. Kanata, Y. Tosaka, H. Ehara, S. Satoh

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摘要

硅中各种离子的停止能力是模拟硅器件软误差，特别是由次级宇宙射线中子引起的软误差所必需的。本文提出了一种测量硅中离子停止功率的新方法，该方法采用在SOI结构上制造的二极管。将该技术应用于He/sup 2+/离子，得到的停止功率与Ziegler公式的结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Test structure for measurement of ion stopping power

The stopping powers of various ions in Si are essential for simulation of the soft errors of Si devices induced especially by secondary cosmic-ray neutrons. A new method has been developed for measuring ion stopping powers in Si that employs diodes fabricated on the SOI structure. This technique was applied to He/sup 2+/ ions, and the obtained stopping power was in good agreement with that obtained from the well known Ziegler formula.

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ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

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