场效应MOS晶体管对调制太赫兹辐射信号检测响应的数值研究

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems Pub Date : 2009-12-01 DOI:10.1109/ELECTRO.2009.5441062

Yinglei Wang, Zhifeng Yan, Jingxuan Zhu, Xinnan Lin, F. He

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引用次数: 0

摘要

本文从控制MOSFET中太赫兹信号输运的基本流体动力学方程和通用的MOSFET电荷密度方程出发，编制了一个数值模拟程序，详细研究了场效应MOS晶体管(MOSFET)探测器对调制太赫兹辐射信号的响应特性，使该程序适用于MOSFET太赫兹探测器的大范围工作区域。仿真结果与现有理论基本一致，理论只适用于非谐振区域。所开发的数值模拟程序还用于分析MOSFET探测器对谐振区调制太赫兹辐射的光响应特性，展示了MOSFET探测器设计和优化的潜在应用。

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Numerical study on field effect MOS transistor detection response to modulated terahertz radiation signal

The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in detail in this paper by a numerical simulation program developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET and a universal MOSFET charge density equation which makes this program suitable in a wide range of operation region of MOSFET terahertz detector. The simulation results agree well with the existing theory which is only suitable in the nonresonant region. The developed numerical simulation program is also used to analyze the photoresponse characteristics of the MOSFET detector to modulated terahertz radiation in the resonant region, demonstrating potential application in the detector design and optimization from a MOSFET.

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来源期刊

2009 International Conference on Emerging Trends in Electronic and Photonic Devices & Systems

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