全彩色iii -氮化物RGB LED的仿真

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2016-07-11 DOI:10.1109/NUSOD.2016.7547069

M. Kisin, Denis V. Mamedov, H. El-Ghoroury

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引用次数: 1

摘要

展示了完全覆盖标准红绿蓝(RGB)光谱的全彩色iii -氮化物发光二极管(LED)。在三氮化多色LED的多量子阱(MQW)有源区引入中间载流子阻挡层(ICBLs)来控制不同发射波长的光活性量子阱(qw)之间的载流子注入分布。ICBL参数和有源量子阱特性之间的强烈相互依赖性是全彩LED设计和实现的主要挑战。我们表明，icbl是全彩RGB LED设计的基本要素，需要在材料组成和掺杂水平上进行优化。原型icbl led结构已经在奥斯坦多技术公司生长，展示了可调谐的全彩操作。

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Simulation of full-color III-nitride RGB LED

Full-color III-nitride light-emitting diode (LED) with complete covering of standard red-green-blue (RGB) optical emission spectrum is demonstrated. Intermediate carrier blocking layers (ICBLs) are introduced into multi-quantum well (MQW) active region of III-nitride multi-color LED to control the carrier injection distribution among the optically active quantum wells (QWs) with different emission wavelengths. Strong interdependence between ICBL parameters and active QW characteristics represents the main challenge for the full-color LED design and implementation. We show that ICBLs are essential elements of full-color RGB LED design requiring optimization both in material composition and doping level. Prototype ICBL-LED structure has been grown at Ostendo Technologies Inc. demonstrating tunable full-color operation.

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来源期刊

2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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