基于氟碳基等离子体蚀刻过程三维特征轮廓仿真的真实表面反应建模

Yeong-Geun Yook, H. S. You, Y. Im, Won-Seok Chang
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引用次数: 0

摘要

只提供摘要形式。利用氟碳等离子体实现高纵横比接触孔是下一代器件面临的新挑战之一。然而,由于氟碳等离子体本身的复杂性,目前的科学技术还无法对这些过程进行可预测的模拟。为了解决这些问题,我们开发了一个逼真的超快速半导体等离子体加工三维地形模拟器,并结合了零维体等离子体模型。在本工作中,我们引入了一个表面反应模型来捕捉氟碳等离子体下的真实表面反应现象。该表面反应模型基于两层模型,考虑了在等离子体蚀刻过程中存在稳态氟碳钝化层的情况下,氟碳与目标材料混合层的等离子体蚀刻动力学。该表面反应模型中的关键参数是通过先前报道的数据或从氟碳等离子体系统中的几种诊断工具中拟合的实验数据提取的。基于该模型,可以通过入射离子能量、中性离子通量和离子通量的函数获得聚合物钝化层厚度、沉积/蚀刻速率等有用信息。最后,我们证明了三维特征轮廓模拟与这种真实的表面反应模型相结合,可以更好地理解半导体等离子体工艺中高纵横比接触孔蚀刻过程中出现的颈缩、弯曲、蚀刻停止和扭曲等问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Realistic surface reaction modeling for 3D feature profile simulation of fluorocarbon-based plasma etch process
Summary form only given. One of the emerging challenges in next generation device is to achieve the high aspect ratio contact holes using fluorocarbon plasma. However, it is regarded that the predictable simulation for these processes is beyond current science and technology due to their inherent complexity of fluorocarbon plasma. To address these issues, we have developed a realistic and ultrafast 3D topography simulator of semiconductor plasma processing coupled with zero-D bulk plasma models. In this work, we introduce a surface reaction model to capture the realistic surface reaction phenomena under the fluorocarbon plasma. This surface reaction model is based on a two-layer model that considers plasma etch kinetics at a mixed layer of fluorocarbon and target material under the existence of a steady-state fluorocarbon passivation layer during plasma etching. The key parameters in this surface reaction model are extracted by previously reported data or fitting experimental data from several diagnostic tools in a fluorocarbon plasma system. Based on this model, useful information such as the thickness of polymer passivation layer, and deposition/etch rate can be obtained by functions of the incidence ion energy, neutral and ion fluxes. Finally, we demonstrate that 3D feature profile simulation coupled with this realistic surface reaction model can lead to better understanding of the emerging issues in plasma etch process, such as necking, bowing, etch stops and twisting during high aspect ratio contact hole etch in semiconductor plasma process.
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