一种带高q有源电感的CMOS宽带放大器设计

The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings. Pub Date : 2003-07-22 DOI:10.1109/IWSOC.2003.1213011

Jhy-Neng Yang, Y. Cheng, Chen-Yi Lee

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引用次数: 10

摘要

提出了一种采用0.25 /spl μ m CMOS工艺的高q有源电感CMOS宽带放大器。在该宽带放大器中，将紧凑型高q有源电感连接到共门配置，以提高高功率增益、宽带宽、低功耗和简单匹配的性能。不使用任何无源电感元件是为了减少芯片的面积和复杂性。利用先进设计系统(ADS)模拟器对所设计的宽带放大器的性能进行了验证。结果表明，该放大器在-3 dB带宽下的功率增益为20 dB(S21)， S11为-17 dB, S22为-21 dB，噪声系数(NF)为8 dB，功耗为18 mW。

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A design of CMOS broadband amplifier with high-Q active inductor

A CMOS broadband amplifier with high-Q active inductor using 0.25 /spl mu/m CMOS process is presented. In this broadband amplifier, the compact high-Q active inductor is connected to the common-gate configuration to improve the performance of the high power gain, wide bandwidth, low power consumption and simple matching characteristics. Not using any passive inductor components is to be reduced the area of chip and the complexity. Advance Design System (ADS) simulator has been performed to verify the performance of the designed broadband amplifier. It has been shown that the amplifier has a 20 dB(S21) power gain in -3 dB bandwidth, S11 of -17 dB, S22 of -21 dB and noise figure (NF) of 8 dB under 2.5 V power supply with 18 mW power consumption.

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The 3rd IEEE International Workshop on System-on-Chip for Real-Time Applications, 2003. Proceedings.

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