利用数值模拟分析了空间应用GaN HEMT参数对阻挡层厚度的依赖关系

2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP) Pub Date : 2017-07-01 DOI:10.1109/OPTIP.2017.8030703

Gudkov Aleksandr, V. Shashurin, V. Vyuginov, V. Tikhomirov, S. Vidyakin, S. Agasieva, S. Chizhikov

{"title":"利用数值模拟分析了空间应用GaN HEMT参数对阻挡层厚度的依赖关系","authors":"Gudkov Aleksandr, V. Shashurin, V. Vyuginov, V. Tikhomirov, S. Vidyakin, S. Agasieva, S. Chizhikov","doi":"10.1109/OPTIP.2017.8030703","DOIUrl":null,"url":null,"abstract":"Numerical simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses of the AlGaN barrier layer, allowing high microwave power implementation.","PeriodicalId":398930,"journal":{"name":"2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Dependence analysis of the GaN HEMT parameters for space application on the thickness AlGaN barrier layer by numerical simulation\",\"authors\":\"Gudkov Aleksandr, V. Shashurin, V. Vyuginov, V. Tikhomirov, S. Vidyakin, S. Agasieva, S. Chizhikov\",\"doi\":\"10.1109/OPTIP.2017.8030703\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Numerical simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses of the AlGaN barrier layer, allowing high microwave power implementation.\",\"PeriodicalId\":398930,\"journal\":{\"name\":\"2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/OPTIP.2017.8030703\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/OPTIP.2017.8030703","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

对基于GaN/AlN/AlGaN异质结构的场效应微波高电子迁移率晶体管(HEMTs)进行了数值模拟。研究结果表明，最佳厚度的AlGaN阻挡层，可以实现高微波功率。

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Dependence analysis of the GaN HEMT parameters for space application on the thickness AlGaN barrier layer by numerical simulation

Numerical simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses of the AlGaN barrier layer, allowing high microwave power implementation.

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2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP)

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