用于InP-on-BiCMOS集成的200 GHz互连

2013 IEEE MTT-S International Microwave Symposium Digest (MTT) Pub Date : 2013-06-02 DOI:10.1109/MWSYM.2013.6697393

I. Ostermay, F. Schmueckle, R. Doerner, A. Thies, W. Heinrich, O. Krueger, V. Krozer, T. Jensen, T. Kraemer, M. Lisker, A. Trusch, E. Matthus, Y. Borokhovych, B. Tillack

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引用次数: 13

摘要

为了结合InP-HBT和SiGe-BiCMOS技术的优势，基于转移基板概念和BCB晶圆键合，开发了一种3D集成方法。利用该工艺实现了垂直互连，具有高达220 GHz的优异宽带传输性能。插入损耗在w频段以内保持在0.5dB以下，在220GHz以内保持在1dB以下。通过全频率范围内的三维电磁仿真，可以很好地描述互连关系。

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200 GHz interconnects for InP-on-BiCMOS integration

In order to combine the advantages of both InP-HBT and SiGe-BiCMOS technology, a 3D integration approach has been developed based on the transferred-substrate concept with BCB wafer bonding. Using this process vertical interconnects are realized that exhibit excellent broadband transmission properties up to 220 GHz. Insertion loss remains below 0.5dB up to W-band and 1dB to 220GHz. The interconnects can be described with good accuracy by 3D EM simulation over the full frequency range.

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2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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