D. Dorfan, T. Dubbs, A. Grillo, W. Rowe, H. Sadrozinski, A. Seiden, E. Spencer, S. Stromberg, R. Wichmann, N. Ipe, S. Mao
{"title":"双极晶体管辐射损伤对电流增益的剂量率依赖性测量","authors":"D. Dorfan, T. Dubbs, A. Grillo, W. Rowe, H. Sadrozinski, A. Seiden, E. Spencer, S. Stromberg, R. Wichmann, N. Ipe, S. Mao","doi":"10.1109/NSSMIC.1998.775155","DOIUrl":null,"url":null,"abstract":"We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest close to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing to high dose rate data is demonstrated.","PeriodicalId":129202,"journal":{"name":"1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors\",\"authors\":\"D. Dorfan, T. Dubbs, A. Grillo, W. Rowe, H. Sadrozinski, A. Seiden, E. Spencer, S. Stromberg, R. Wichmann, N. Ipe, S. Mao\",\"doi\":\"10.1109/NSSMIC.1998.775155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest close to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing to high dose rate data is demonstrated.\",\"PeriodicalId\":129202,\"journal\":{\"name\":\"1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-11-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.1998.775155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.1998.775155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement of dose rate dependence of radiation induced damage to the current gain in bipolar transistors
We report the study of radiation induced change in the current gain of bipolar transistors for three different gamma dose rates. The dose rates differed by a factor of 60 with the lowest close to that anticipated for the LHC, and the highest at a rate we have been routinely using for radiation damage tests. The maximum dose attained was 200 kRad, which is high enough to compare with other measurements. The importance of annealing to high dose rate data is demonstrated.