用于多通道闭环神经调节的高TCMRR、固有电荷平衡双向前端

José Luis Valtierra, R. Fiorelli, Norberto Pérez-Prieto, M. Delgado-Restituto, Á. Rodríguez-Vázquez
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引用次数: 0

摘要

本文介绍了一种用于植入式闭环神经调节的多通道双向前端。通过4通道h桥电流源共享刺激器前端,通过拓扑固有电荷平衡最小化电极中的剩余电荷下降,减少了刺激伪像。由于其高总共模抑制比(TCMRR),由于电极失配导致的CMRR退化,4通道斩波前端能够在存在伪影的情况下进行多通道记录。实验验证表明,在180 nm标准工艺下,刺激器前端的电荷平衡为0.059%,直流电流误差为0.275 nA。记录前端功耗为3.24 μ W,可承受高达1 Vpp的共模干扰,在500 mVpp输入时显示> 66 dB的TCMRR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A High TCMRR, Inherently Charge Balanced Bidirectional Front-End for Multichannel Closed-Loop Neuromodulation
This paper describes a multichannel bidirectional front-end for implantable closed-loop neuromodulation. Stimulation artefacts are reduced by way of a 4-channel H-bridge current source sharing stimulator front-end that minimizes residual charge drops in the electrodes via topology-inherent charge balancing. A 4-channel chopper front-end is capable of multichannel recording in the presence of artefacts as a result of its high total common-mode rejection ratio (TCMRR) that accounts for CMRR degradation due to electrode mismatch. Experimental verification of a prototype fabricated in a standard 180 nm process shows a stimulator front-end with 0.059% charge balance and 0.275 nA DC current error. The recording front-end consumes 3.24 µW, tolerates common-mode interference up to 1 Vpp and shows a TCMRR > 66 dB for 500 mVpp inputs.
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