强均匀磁场下半导体单晶立方结构薄膜空穴转移频率的计算

2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) Pub Date : 2016-06-01 DOI:10.1109/EDM.2016.7538683

N. Z. Altynbekov, Y. Ososkov, A. Moiseev

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引用次数: 0

摘要

利用微扰理论推导了在强均匀磁场作用下立方结构半导体薄膜中空穴转移频率的计算公式。这种转移发生在数字n = 0和n = 1的朗道能级之间。

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Calculation of holes transfer frequency for thin semiconductor monocrystalline cubic structure film under strong uniform magnetic field

Formula for calculation of holes transfer frequency in a semiconductor thin film with cubic structure under a strong uniform magnetic field is derived using perturbation theory approach. The transfer takes place between the Landau levels with numbers n = 0 and n = 1.

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2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)

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