{"title":"相变光学记录中Ge/sub 2/Sb/sub 2.3/Te/sub 5/薄膜沉积态、熔融淬火态和激发态非晶态的结晶行为","authors":"P. Khulbe, E. Wright, T. Hurst, M. Mansuripur","doi":"10.1109/ODS.2000.847983","DOIUrl":null,"url":null,"abstract":"In phase change (PC) optical data storage, information is recorded as sub-micron sized amorphous marks (bits) on a moving polycrystalline chalcogenide film using a focused high power laser pulse. It raises the local temperature of the film above its melting temperature (T/sub M/) and the subsequent rapid cooling leaves an amorphous mark. These amorphous marks can be erased (i.e., re-crystallized) by locally annealing them above the glass transition temperature of the storage material under the same focused laser beam at a moderate power level. Here, we will discuss the crystallization behavior of the as-deposited, melt-quenched and primed Ge/sub 2/Sb/sub 2.3/Te/sub 5/ (GST) film used in data storage.","PeriodicalId":215485,"journal":{"name":"2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491)","volume":"130 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Crystallization behavior of as-deposited, melt-quenched, and primed amorphous states of Ge/sub 2/Sb/sub 2.3/Te/sub 5/ films in phase change optical recording\",\"authors\":\"P. Khulbe, E. Wright, T. Hurst, M. Mansuripur\",\"doi\":\"10.1109/ODS.2000.847983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In phase change (PC) optical data storage, information is recorded as sub-micron sized amorphous marks (bits) on a moving polycrystalline chalcogenide film using a focused high power laser pulse. It raises the local temperature of the film above its melting temperature (T/sub M/) and the subsequent rapid cooling leaves an amorphous mark. These amorphous marks can be erased (i.e., re-crystallized) by locally annealing them above the glass transition temperature of the storage material under the same focused laser beam at a moderate power level. Here, we will discuss the crystallization behavior of the as-deposited, melt-quenched and primed Ge/sub 2/Sb/sub 2.3/Te/sub 5/ (GST) film used in data storage.\",\"PeriodicalId\":215485,\"journal\":{\"name\":\"2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491)\",\"volume\":\"130 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ODS.2000.847983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Optical Data Storage. Conference Digest (Cat. No.00TH8491)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ODS.2000.847983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Crystallization behavior of as-deposited, melt-quenched, and primed amorphous states of Ge/sub 2/Sb/sub 2.3/Te/sub 5/ films in phase change optical recording
In phase change (PC) optical data storage, information is recorded as sub-micron sized amorphous marks (bits) on a moving polycrystalline chalcogenide film using a focused high power laser pulse. It raises the local temperature of the film above its melting temperature (T/sub M/) and the subsequent rapid cooling leaves an amorphous mark. These amorphous marks can be erased (i.e., re-crystallized) by locally annealing them above the glass transition temperature of the storage material under the same focused laser beam at a moderate power level. Here, we will discuss the crystallization behavior of the as-deposited, melt-quenched and primed Ge/sub 2/Sb/sub 2.3/Te/sub 5/ (GST) film used in data storage.
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