{"title":"薄铝层对制备硅微锥结构的影响","authors":"H. Yoshimura, H. Kanakusa, K. Nakazawa, A. Hatta","doi":"10.1109/DEIV.2006.357428","DOIUrl":null,"url":null,"abstract":"A unique technique of the fabricating sub micron sized silicon (Si) cones structure has been found. (Yoshimura, 2002) The technique consists of two processes: 1) depositing fine metal particles or layer, 2) etching in microwave plasma with negatively bias. A size distribution of unevenness on the surface of deposited aluminum (Al) layer was observed from samples after several minutes etching. A similar distribution of the cone shaped products were observed from 60 minutes etched samples also. The change of shape of the unevenness and cone shaped products under varied etching time was observed by using FE-SEM. The EDX spectrum of Al vs. Si was observed. In this paper, the relationship of distribution between the unevenness on Al layer and size of the cone products will be presented","PeriodicalId":369861,"journal":{"name":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","volume":"215 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Thin Aluminum Layer on Fabricating Silicon Micro Cone Structures\",\"authors\":\"H. Yoshimura, H. Kanakusa, K. Nakazawa, A. Hatta\",\"doi\":\"10.1109/DEIV.2006.357428\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A unique technique of the fabricating sub micron sized silicon (Si) cones structure has been found. (Yoshimura, 2002) The technique consists of two processes: 1) depositing fine metal particles or layer, 2) etching in microwave plasma with negatively bias. A size distribution of unevenness on the surface of deposited aluminum (Al) layer was observed from samples after several minutes etching. A similar distribution of the cone shaped products were observed from 60 minutes etched samples also. The change of shape of the unevenness and cone shaped products under varied etching time was observed by using FE-SEM. The EDX spectrum of Al vs. Si was observed. In this paper, the relationship of distribution between the unevenness on Al layer and size of the cone products will be presented\",\"PeriodicalId\":369861,\"journal\":{\"name\":\"2006 International Symposium on Discharges and Electrical Insulation in Vacuum\",\"volume\":\"215 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Symposium on Discharges and Electrical Insulation in Vacuum\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DEIV.2006.357428\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Symposium on Discharges and Electrical Insulation in Vacuum","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEIV.2006.357428","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Thin Aluminum Layer on Fabricating Silicon Micro Cone Structures
A unique technique of the fabricating sub micron sized silicon (Si) cones structure has been found. (Yoshimura, 2002) The technique consists of two processes: 1) depositing fine metal particles or layer, 2) etching in microwave plasma with negatively bias. A size distribution of unevenness on the surface of deposited aluminum (Al) layer was observed from samples after several minutes etching. A similar distribution of the cone shaped products were observed from 60 minutes etched samples also. The change of shape of the unevenness and cone shaped products under varied etching time was observed by using FE-SEM. The EDX spectrum of Al vs. Si was observed. In this paper, the relationship of distribution between the unevenness on Al layer and size of the cone products will be presented
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