{"title":"基于蒙特卡罗的半色调相移掩模光学接近校正","authors":"Yong-Ho Oh, Jai-Cheol Lee, Sungwoo Lim","doi":"10.1109/IMNC.1998.729964","DOIUrl":null,"url":null,"abstract":"We developed a Monte-Carlo based optical proximity correction (OPC) program which can be applied to the strong or half-tone phase shift mask (PSM) as well as the binary masks. In previous report [l], we presented smart OPC solutions for binary masks. We showed that manufacturable OPC mask can be obtained by incorporating novel object function and optimization strategy. In this work, we extended the algorithm to PSM. We show the detailed algorithm of our program and several solutions for the OPC of half-tone PSM. One example of our results is shown in Fig. 1. The test pattern is the simple contact hole pattern whose size is 0.4 X 0.4 (AJNA)’. The aerial image for the binary mask is shown in Fig. 1 (a). Fig. 1 (b) shows the aerial image for the half-tone PSM whose transmittance is 9%. Fig. 1 (c) of the solution after OPC for the half-tone PSM shows dramatic enhancement of aerial image quality. Fig. 1 (d) shows the abstraction of the solution of (c) to enhancing the mask manufacturabilty. In this figure, we can find that the aerial image quality is a little degraded comparing with that of (c).","PeriodicalId":356908,"journal":{"name":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monte-Carlo Based Optical Proximity Correction For The Half-Tone Phase Shift Mask\",\"authors\":\"Yong-Ho Oh, Jai-Cheol Lee, Sungwoo Lim\",\"doi\":\"10.1109/IMNC.1998.729964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We developed a Monte-Carlo based optical proximity correction (OPC) program which can be applied to the strong or half-tone phase shift mask (PSM) as well as the binary masks. In previous report [l], we presented smart OPC solutions for binary masks. We showed that manufacturable OPC mask can be obtained by incorporating novel object function and optimization strategy. In this work, we extended the algorithm to PSM. We show the detailed algorithm of our program and several solutions for the OPC of half-tone PSM. One example of our results is shown in Fig. 1. The test pattern is the simple contact hole pattern whose size is 0.4 X 0.4 (AJNA)’. The aerial image for the binary mask is shown in Fig. 1 (a). Fig. 1 (b) shows the aerial image for the half-tone PSM whose transmittance is 9%. Fig. 1 (c) of the solution after OPC for the half-tone PSM shows dramatic enhancement of aerial image quality. Fig. 1 (d) shows the abstraction of the solution of (c) to enhancing the mask manufacturabilty. In this figure, we can find that the aerial image quality is a little degraded comparing with that of (c).\",\"PeriodicalId\":356908,\"journal\":{\"name\":\"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-07-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMNC.1998.729964\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMNC.1998.729964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
我们开发了一种基于蒙特卡罗的光学接近校正(OPC)程序,该程序可以应用于强色调或半色调相移掩模(PSM)以及二进制掩模。在之前的报告[1]中,我们提出了二进制掩码的智能OPC解决方案。研究表明,通过引入新的目标函数和优化策略,可以获得可制造的OPC掩模。在这项工作中,我们将该算法扩展到PSM。给出了该程序的详细算法和半色调PSM的OPC的几种解决方案。我们的结果的一个例子如图1所示。试验模式为简单的接触孔模式,尺寸为0.4 X 0.4 (AJNA) '。二值掩模的航拍图像如图1 (a)所示。图1 (b)为透射率为9%的半色调PSM的航拍图像。图1 (c)为半色调PSM OPC后的解决方案,显示了航拍图像质量的显著增强。图1 (d)显示了(c)解决方案的抽象,以增强掩模的可制造性。从图中可以看出,与(c)相比,航拍图像的质量略有下降。
Monte-Carlo Based Optical Proximity Correction For The Half-Tone Phase Shift Mask
We developed a Monte-Carlo based optical proximity correction (OPC) program which can be applied to the strong or half-tone phase shift mask (PSM) as well as the binary masks. In previous report [l], we presented smart OPC solutions for binary masks. We showed that manufacturable OPC mask can be obtained by incorporating novel object function and optimization strategy. In this work, we extended the algorithm to PSM. We show the detailed algorithm of our program and several solutions for the OPC of half-tone PSM. One example of our results is shown in Fig. 1. The test pattern is the simple contact hole pattern whose size is 0.4 X 0.4 (AJNA)’. The aerial image for the binary mask is shown in Fig. 1 (a). Fig. 1 (b) shows the aerial image for the half-tone PSM whose transmittance is 9%. Fig. 1 (c) of the solution after OPC for the half-tone PSM shows dramatic enhancement of aerial image quality. Fig. 1 (d) shows the abstraction of the solution of (c) to enhancing the mask manufacturabilty. In this figure, we can find that the aerial image quality is a little degraded comparing with that of (c).