常压MOVPE生长的高性能极化不敏感应变InGaAsP/InGaAsP MQW电吸收调制器

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 1994-03-27 DOI:10.1109/ICIPRM.1994.328165

A. Ougazzaden, A. Mircea, S. Chelles, F. Devaux, F. Huet, G. Le-Roux

{"title":"常压MOVPE生长的高性能极化不敏感应变InGaAsP/InGaAsP MQW电吸收调制器","authors":"A. Ougazzaden, A. Mircea, S. Chelles, F. Devaux, F. Huet, G. Le-Roux","doi":"10.1109/ICIPRM.1994.328165","DOIUrl":null,"url":null,"abstract":"Electroabsorption (EA) modulators based on the quantum confined Stark effect (QCSE) reach a high level of performance using InGaAsP/lnGaAsP multi-quantum well (MQW) structures. However applications for optical fiber communications, such as in-line optical pulse reshaping and optical demultiplexing, require polarization independent operation. This means identical on-state attenuation and electroabsorption spectra for both TE and TM modes. That is, the same electron to heavy hole, and electron to light hole transition energies as well as their shift with the applied electric field; and the same oscillator strength for TE and TM modes. The growth was performed by atmospheric pressure MOVPE in a T-shaped reactor.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High static performance polarization insensitive strained InGaAsP/InGaAsP MQW electroabsorption modulator grown by atmospheric pressure MOVPE\",\"authors\":\"A. Ougazzaden, A. Mircea, S. Chelles, F. Devaux, F. Huet, G. Le-Roux\",\"doi\":\"10.1109/ICIPRM.1994.328165\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electroabsorption (EA) modulators based on the quantum confined Stark effect (QCSE) reach a high level of performance using InGaAsP/lnGaAsP multi-quantum well (MQW) structures. However applications for optical fiber communications, such as in-line optical pulse reshaping and optical demultiplexing, require polarization independent operation. This means identical on-state attenuation and electroabsorption spectra for both TE and TM modes. That is, the same electron to heavy hole, and electron to light hole transition energies as well as their shift with the applied electric field; and the same oscillator strength for TE and TM modes. The growth was performed by atmospheric pressure MOVPE in a T-shaped reactor.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328165\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328165","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

利用InGaAsP/lnGaAsP多量子阱(MQW)结构，基于量子受限斯塔克效应(QCSE)的电吸收(EA)调制器达到了高水平的性能。然而，光纤通信的应用，如在线光脉冲整形和光解复用，需要偏振无关的操作。这意味着TE和TM模式的导态衰减和电吸收光谱相同。即相同的电子到重空穴、电子到轻空穴的跃迁能及其随外加电场的位移;并且TE和TM模式的振荡器强度相同。在t型反应器中用常压MOVPE进行生长。

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High static performance polarization insensitive strained InGaAsP/InGaAsP MQW electroabsorption modulator grown by atmospheric pressure MOVPE

Electroabsorption (EA) modulators based on the quantum confined Stark effect (QCSE) reach a high level of performance using InGaAsP/lnGaAsP multi-quantum well (MQW) structures. However applications for optical fiber communications, such as in-line optical pulse reshaping and optical demultiplexing, require polarization independent operation. This means identical on-state attenuation and electroabsorption spectra for both TE and TM modes. That is, the same electron to heavy hole, and electron to light hole transition energies as well as their shift with the applied electric field; and the same oscillator strength for TE and TM modes. The growth was performed by atmospheric pressure MOVPE in a T-shaped reactor.<>

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Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)

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