{"title":"亚微米三层材料GaAs MESFET的建模，包括微波频率应用中第三区长度的影响","authors":"N. Lakhdar, B. Lakehal","doi":"10.1109/GECS.2017.8066257","DOIUrl":null,"url":null,"abstract":"This work presents a study based on the modeling of Triple Material (TM) Gallium Arsenide (GaAs) MESFET. The proposed structure is used to minimize the short channel effects and enhance the device performance for microwave frequency applications. Different device characteristics like I-V and microwave characteristics incorporating the effect of the third region length of submicron TM GaAs MESFET are investigated. Therefore, the device performance has been evaluated in order to show the influence of the third region length on the GaAs MESFETs-based gate engineering. The proposed model is in excellent accord with 2-D device simulator called ATLAS from SILVACO. The obtained results demonstrate that TM GaAs MESFET presents an alternative solution to designer for high frequency applications.","PeriodicalId":214657,"journal":{"name":"2017 International Conference on Green Energy Conversion Systems (GECS)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Modeling of submicron triple material GaAs MESFET including the effect of third region length for microwave frequency applications\",\"authors\":\"N. Lakhdar, B. Lakehal\",\"doi\":\"10.1109/GECS.2017.8066257\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a study based on the modeling of Triple Material (TM) Gallium Arsenide (GaAs) MESFET. The proposed structure is used to minimize the short channel effects and enhance the device performance for microwave frequency applications. Different device characteristics like I-V and microwave characteristics incorporating the effect of the third region length of submicron TM GaAs MESFET are investigated. Therefore, the device performance has been evaluated in order to show the influence of the third region length on the GaAs MESFETs-based gate engineering. The proposed model is in excellent accord with 2-D device simulator called ATLAS from SILVACO. The obtained results demonstrate that TM GaAs MESFET presents an alternative solution to designer for high frequency applications.\",\"PeriodicalId\":214657,\"journal\":{\"name\":\"2017 International Conference on Green Energy Conversion Systems (GECS)\",\"volume\":\"128 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Conference on Green Energy Conversion Systems (GECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GECS.2017.8066257\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Conference on Green Energy Conversion Systems (GECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GECS.2017.8066257","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Modeling of submicron triple material GaAs MESFET including the effect of third region length for microwave frequency applications
This work presents a study based on the modeling of Triple Material (TM) Gallium Arsenide (GaAs) MESFET. The proposed structure is used to minimize the short channel effects and enhance the device performance for microwave frequency applications. Different device characteristics like I-V and microwave characteristics incorporating the effect of the third region length of submicron TM GaAs MESFET are investigated. Therefore, the device performance has been evaluated in order to show the influence of the third region length on the GaAs MESFETs-based gate engineering. The proposed model is in excellent accord with 2-D device simulator called ATLAS from SILVACO. The obtained results demonstrate that TM GaAs MESFET presents an alternative solution to designer for high frequency applications.
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