基于动态局部重构的快速SRAM-FPGA故障注入平台

Ghaffari Fakhreddine, F. Sahraoui, M. A. Benkhelifa, B. Granado, M. Kacou, O. Romain
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引用次数: 9

摘要

基于sram的fpga对恶劣条件(如辐射或电离)非常敏感,需要加固以确保正确运行。为了验证这些SRAM-FPGA的容错解决方案,必须仔细执行故障注入活动。在这项工作中,我们提出了一种新的设计流程,用于在测试设计(DUT)的特定部分执行局部内部故障注入。为了实现这一目标,我们结合了通过内部配置访问端口(ICAP)进行部分动态重构(PDR),以便在SRAM上快速插入故障;隔离设计流(IDF),将被测设计的放置和路由都隔离到特定的局部区域。此外,我们采用地面辐射实验推导出的真实故障分布规律来反映FPGA对辐射的真实行为。使用该流程实现的注入平台显示了使用分布规律驱动方法的重要性。结果表明,该方法的故障注入实验速度比传统的FPGA故障注入方法快15倍以上,仿真时间提高了8倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fast SRAM-FPGA fault injection platform based on dynamic partial reconfiguration
SRAM-based FPGAs are very sensitive to harsh conditions, like radiations or ionizations, and need to be hardened to insure correct running. To validate any fault tolerant solution for these SRAM-FPGA, fault injection campaigns must be conducted carefully. In this work, we present a new design flow to perform localized internal fault injection on specific parts of a Design Under Test (DUT). To achieve this, we combine between Partial Dynamic Reconfiguration (PDR) via Internal Configuration Access Port (ICAP) for rapid fault insertion on SRAM; Isolation Design Flow (IDF) to isolate both of placement and routing of Design Under Test into a specific partial region. Moreover, we applied realistic fault distribution laws deduced from ground-based radiation experiments to reflect realistic behavior of FPGA toward radiations. The implemented injection platform using this flow shows the importance of using distribution laws driven approach. Results show that our fault injection experiments are done more than 15 times faster than one of the traditional FPGA based fault injection methods with a speed-up on simulation time up to 8.
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