基于FinFET的第二代双输出电流输送机的性能评价

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) Pub Date : 2018-07-01 DOI:10.1109/NANO.2018.8626241

M. Yasir, M. S. Ansari, V. K. Sharma

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引用次数: 5

摘要

本文提出了一种基于finfet的高性能DO-CCII的优化设计。所提出的DO-CCII工作在电源电压为$\pm 0.9\mathrm{V}$的情况下，从直流、交流和支路电流的瞬态特性方面对其性能进行了深入的研究。CCII具有良好的高频电流响应特性。电流的3dB BW是11ghz。与CMOS相比，CCII提供了出色的性能。使用HSPICE模拟完成了性能调查。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance Evaluation of a FinFET -based Dual-Output Second Generation Current Conveyor

This paper presents an optimal design of a high performance DO-CCII based on FinFETs. Proposed DO-CCII works on supply voltage of $\pm 0.9\mathrm{V}$, The performance of the CCII has been thoroughly investigated in terms of DC, AC and transient characteristics of branch currents. CCII shows excellent high frequency response of currents. The 3dB BW for currents is 11 GHz. CCII provides excellent performance over its CMOS counterpart. Performance investigation has been done using HSPICE simulations.

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2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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