具有延伸沟槽氧化物的垂直功率MOSFET

2014 International Conference on Electronics, Information and Communications (ICEIC) Pub Date : 2014-10-02 DOI:10.1109/ELINFOCOM.2014.6914421

Hyeongdo Choi, Doohyung Cho, G. Song, Kwangsoo Kim

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引用次数: 2

摘要

提出了一种扩展沟槽氧化物的垂直功率MOSFET。该器件结构的关键特点是设置在器件侧面的沟槽氧化物延伸到n+衬底。该技术减少了氧化物的角落效应，并改善了击穿电压(BV)和特定导通电阻之间的权衡(Ron, sp)。采用Silvaco T-CAD工具进行仿真，分析器件的特性。

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A vertical power MOSFET with the extended trench oxide

A vertical power MOSFET with the extended trench oxide is proposed. The key feature of this device structure is that the trench oxide, which is set in the side of the device, is extended to n+ substrate. This technique decreases the corner effect of oxide and improves the tradeoff between breakdown voltage (BV) and the specific on-resistance (Ron, sp). Silvaco T-CAD tool is used for the simulation to analyze characteristics of the device.

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来源期刊

2014 International Conference on Electronics, Information and Communications (ICEIC)

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