改性喷涂工艺制备Cu2ZnSnS4薄膜的性能

2016 International Renewable and Sustainable Energy Conference (IRSEC) Pub Date : 2016-11-01 DOI:10.1109/IRSEC.2016.7983950

Samira Bouzida, E. Benamar, M. Battas, Z. Laghfour, Z. Sekkat, A. Slaoui, M. Abd-lefdil, M. Regragui

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引用次数: 3

摘要

采用喷雾辅助化学气相沉积法，在不同沉积温度下制备了Cu2ZnSnS4薄膜，而无需进行任何硫化处理。x射线衍射结果表明(112)的择优取向。拉曼光谱证实了CZTS kesterite的结构。通过光学测量获得了1.35 ~ 1.5 eV的带隙值。

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Properties of Cu2ZnSnS4 films elaborated by modified spray process

By spray assisted chemical vapor deposition process, we have elaborated Cu2ZnSnS4 thin films at various deposition temperatures without any sulfurization treatment. The (112) preferential orientation was showed by X-ray diffraction. Raman spectroscopy confirmed the CZTS kesterite structure. Band gap values ranging from 1.35 eV to 1.5 eV were obtained by optical measurements.

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2016 International Renewable and Sustainable Energy Conference (IRSEC)

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