{"title":"用于x射线探测的高电阻硅光电二极管阵列","authors":"Steve Ross, M. Haji-Sheikh, G. Westberg","doi":"10.1109/I2MTC.2013.6555569","DOIUrl":null,"url":null,"abstract":"Presented is a method to build silicon multi-pixel x-ray detectors for use on the Argonne National Laboratory's Advanced Photon Source x-ray synchrotron. These detectors are PIN diodes constructed using heavily doped oxide sources. The construction method chosen helps reduce the background leakage current and allows for a minimum of process steps. We discuss test results of the characterization of the sensors.","PeriodicalId":432388,"journal":{"name":"2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)","volume":"421 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High-resistivity silicon photodiode arrays for x-ray detection\",\"authors\":\"Steve Ross, M. Haji-Sheikh, G. Westberg\",\"doi\":\"10.1109/I2MTC.2013.6555569\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presented is a method to build silicon multi-pixel x-ray detectors for use on the Argonne National Laboratory's Advanced Photon Source x-ray synchrotron. These detectors are PIN diodes constructed using heavily doped oxide sources. The construction method chosen helps reduce the background leakage current and allows for a minimum of process steps. We discuss test results of the characterization of the sensors.\",\"PeriodicalId\":432388,\"journal\":{\"name\":\"2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)\",\"volume\":\"421 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/I2MTC.2013.6555569\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/I2MTC.2013.6555569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-resistivity silicon photodiode arrays for x-ray detection
Presented is a method to build silicon multi-pixel x-ray detectors for use on the Argonne National Laboratory's Advanced Photon Source x-ray synchrotron. These detectors are PIN diodes constructed using heavily doped oxide sources. The construction method chosen helps reduce the background leakage current and allows for a minimum of process steps. We discuss test results of the characterization of the sensors.