Vdd对PD SOI电路中传播脉宽变化的影响

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852825

B. Min, G. Workman, D. Chang, O. Zia, Y. Yu, R. Widenhofer, B. Simon, N. Cave, H. Sanchez, S. Veeraraghavan, M. Mendicino, B. Yeargain

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引用次数: 0

摘要

研究了部分耗尽SOI中开放式链的脉宽变化。Vdd对脉冲变化(压缩或拉伸)的影响以及温度和光照的影响被深入研究。利用众所周知的电容耦合、产生和重组概念，利用实验数据提出了一个物理模型。

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Vdd impact on propagation pulse width variation in PD SOI circuits

Pulse width variation through open-ended chains in partially depleted SOI is investigated. Vdd impact on the pulse variation (either compression or stretching) is intensively studied, as well as temperature and illumination contributions. A physical model using well-known capacitive coupling, generation, and recombination concepts is proposed with experimental data.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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