大面积全集成三维虚拟制造中模式依赖蚀刻效应的预测建模

D. Fried, K. Greiner, D. Faken, M. Kamon, A. Pap, R. Patz, M. Stock, J. Lehto, S. Breit
{"title":"大面积全集成三维虚拟制造中模式依赖蚀刻效应的预测建模","authors":"D. Fried, K. Greiner, D. Faken, M. Kamon, A. Pap, R. Patz, M. Stock, J. Lehto, S. Breit","doi":"10.1109/SISPAD.2014.6931600","DOIUrl":null,"url":null,"abstract":"We present a predictive modeling approach for pattern-dependent etch processes implemented in a 3D virtual fabrication software platform. This technique combines long-range effects using design data and short-range effects using predictive 3D models of the design-technology interaction. For the first time, this type of pattern-dependent predictive capability is integrated into a full 3D virtual fabrication environment to enable fast accurate structural modeling of complex advanced technologies such as FinFETs, 3D memory and BEOL interconnect.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Predictive modeling of pattern-dependent etch effects in large-area fully-integrated 3D virtual fabrication\",\"authors\":\"D. Fried, K. Greiner, D. Faken, M. Kamon, A. Pap, R. Patz, M. Stock, J. Lehto, S. Breit\",\"doi\":\"10.1109/SISPAD.2014.6931600\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a predictive modeling approach for pattern-dependent etch processes implemented in a 3D virtual fabrication software platform. This technique combines long-range effects using design data and short-range effects using predictive 3D models of the design-technology interaction. For the first time, this type of pattern-dependent predictive capability is integrated into a full 3D virtual fabrication environment to enable fast accurate structural modeling of complex advanced technologies such as FinFETs, 3D memory and BEOL interconnect.\",\"PeriodicalId\":101858,\"journal\":{\"name\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"106 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2014.6931600\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2014.6931600","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

我们提出了一种在三维虚拟制造软件平台上实现的模式依赖蚀刻过程的预测建模方法。该技术结合了使用设计数据的长期效果和使用设计-技术交互的预测性3D模型的短期效果。这种依赖于模式的预测能力首次集成到全3D虚拟制造环境中,以实现复杂先进技术(如finfet, 3D存储器和BEOL互连)的快速准确结构建模。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Predictive modeling of pattern-dependent etch effects in large-area fully-integrated 3D virtual fabrication
We present a predictive modeling approach for pattern-dependent etch processes implemented in a 3D virtual fabrication software platform. This technique combines long-range effects using design data and short-range effects using predictive 3D models of the design-technology interaction. For the first time, this type of pattern-dependent predictive capability is integrated into a full 3D virtual fabrication environment to enable fast accurate structural modeling of complex advanced technologies such as FinFETs, 3D memory and BEOL interconnect.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信