S. Abo, S. Ichihara, T. Lohner, J. Gyulai, F. Wakaya, M. Takai
{"title":"采用中能离子散射法对尖峰退火前后的超浅As谱进行分析","authors":"S. Abo, S. Ichihara, T. Lohner, J. Gyulai, F. Wakaya, M. Takai","doi":"10.1109/IWJT.2005.203878","DOIUrl":null,"url":null,"abstract":"Ultra shallow arsenic profiles implanted into Si with an energy range from 0.5 to 3 keV to a dose of 8/spl times/10/sup 14/ ions/cm/sup 2/ before and after spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing.","PeriodicalId":307038,"journal":{"name":"Extended Abstracts of the Fifth International Workshop on Junction Technology","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra shallow As profiling before and after spike annealing using medium energy ion scattering\",\"authors\":\"S. Abo, S. Ichihara, T. Lohner, J. Gyulai, F. Wakaya, M. Takai\",\"doi\":\"10.1109/IWJT.2005.203878\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ultra shallow arsenic profiles implanted into Si with an energy range from 0.5 to 3 keV to a dose of 8/spl times/10/sup 14/ ions/cm/sup 2/ before and after spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing.\",\"PeriodicalId\":307038,\"journal\":{\"name\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"volume\":\"134 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Extended Abstracts of the Fifth International Workshop on Junction Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2005.203878\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Extended Abstracts of the Fifth International Workshop on Junction Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2005.203878","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra shallow As profiling before and after spike annealing using medium energy ion scattering
Ultra shallow arsenic profiles implanted into Si with an energy range from 0.5 to 3 keV to a dose of 8/spl times/10/sup 14/ ions/cm/sup 2/ before and after spike annealing were measured by medium energy ion scattering (MEIS) with a toroidal electrostatic analyzer (TEA). A shift of the peak of arsenic profile to the surface after spike annealing was observed by MEIS measurement. Most of the implanted arsenic atoms were trapped in the native oxide layer after spike annealing.
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