R. Pernas, M. Sanchez, R. Peña-Sierra, A. Escoboda
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引用次数: 1
摘要
提出了一种测量半导体激光器热阻(R/sub /)的新方法。我们表明,知道施加的结电压,串联电阻和脉冲操作中的实验I/sub / vs. T特性是可以评估R/sub /的。该方法的主要优点是避免了连续波(CW)工作时的测量。我们特别考虑当I/sub /与T特征表现出扭结的情况。为了验证我们的方法,对CdZnSe、InGaAs、GaN和AlGaAs激光器进行了分析。结果表明,用这种方法得到的值与用传统方法得到的值吻合得很好。
A new method to determine the thermal resistance in semiconductor lasers
A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor lasers. We show that knowing the applied junction voltage, the electrical series resistance and the experimental I/sub th/ vs. T characteristic in pulsed operation is possible to evaluate R/sub th/. The key advantage of the method is that it avoids the measurement in continuous-wave (CW) operation. In particular we consider the case when I/sub th/ versus T characteristics exhibit kinks. To verify our method, CdZnSe, InGaAs, GaN and AlGaAs lasers were analyzed. We show that values obtained in this way agree quite well with the values measured by traditional methods.