一种测定半导体激光器热阻的新方法

R. Pernas, M. Sanchez, R. Peña-Sierra, A. Escoboda
{"title":"一种测定半导体激光器热阻的新方法","authors":"R. Pernas, M. Sanchez, R. Peña-Sierra, A. Escoboda","doi":"10.1109/ICCDCS.2002.1004064","DOIUrl":null,"url":null,"abstract":"A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor lasers. We show that knowing the applied junction voltage, the electrical series resistance and the experimental I/sub th/ vs. T characteristic in pulsed operation is possible to evaluate R/sub th/. The key advantage of the method is that it avoids the measurement in continuous-wave (CW) operation. In particular we consider the case when I/sub th/ versus T characteristics exhibit kinks. To verify our method, CdZnSe, InGaAs, GaN and AlGaAs lasers were analyzed. We show that values obtained in this way agree quite well with the values measured by traditional methods.","PeriodicalId":416680,"journal":{"name":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new method to determine the thermal resistance in semiconductor lasers\",\"authors\":\"R. Pernas, M. Sanchez, R. Peña-Sierra, A. Escoboda\",\"doi\":\"10.1109/ICCDCS.2002.1004064\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor lasers. We show that knowing the applied junction voltage, the electrical series resistance and the experimental I/sub th/ vs. T characteristic in pulsed operation is possible to evaluate R/sub th/. The key advantage of the method is that it avoids the measurement in continuous-wave (CW) operation. In particular we consider the case when I/sub th/ versus T characteristics exhibit kinks. To verify our method, CdZnSe, InGaAs, GaN and AlGaAs lasers were analyzed. We show that values obtained in this way agree quite well with the values measured by traditional methods.\",\"PeriodicalId\":416680,\"journal\":{\"name\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCDCS.2002.1004064\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCDCS.2002.1004064","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

提出了一种测量半导体激光器热阻(R/sub /)的新方法。我们表明,知道施加的结电压,串联电阻和脉冲操作中的实验I/sub / vs. T特性是可以评估R/sub /的。该方法的主要优点是避免了连续波(CW)工作时的测量。我们特别考虑当I/sub /与T特征表现出扭结的情况。为了验证我们的方法,对CdZnSe、InGaAs、GaN和AlGaAs激光器进行了分析。结果表明,用这种方法得到的值与用传统方法得到的值吻合得很好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A new method to determine the thermal resistance in semiconductor lasers
A new method is presented to measure the thermal resistance (R/sub th/) of semiconductor lasers. We show that knowing the applied junction voltage, the electrical series resistance and the experimental I/sub th/ vs. T characteristic in pulsed operation is possible to evaluate R/sub th/. The key advantage of the method is that it avoids the measurement in continuous-wave (CW) operation. In particular we consider the case when I/sub th/ versus T characteristics exhibit kinks. To verify our method, CdZnSe, InGaAs, GaN and AlGaAs lasers were analyzed. We show that values obtained in this way agree quite well with the values measured by traditional methods.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信