基于片内与片外无源元件分析的片上系统中共发射极LNA的片包协同设计

X. Duo, Lirong Zheng, H. Tenhunen
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引用次数: 11

摘要

在本文中,我们提出了一种用于5GHz无线局域网应用的系统级封装的共发射极LNAs(低噪声放大器)。该模块的创新之处在于,它是芯片封装共同设计和共同模拟的,具有片上与片外无源元件集成的性能权衡。因此,它为系统级集成的嵌入式射频电子产品提供了最佳的整体解决方案。建立了这些lna的关键性能参数、噪声系数和增益的解析方程,作为无源元件质量因子和封装寄生的函数。因此,它们为设计人员提供了芯片上与芯片外无源元件集成在Sod设计中的定量权衡。最后的模块由0.5/spl mu/m SiGe BiCMOS技术的片上有源元件和集成在MCM-D衬底上的片外无源元件组成。与单芯片LNAs相比,这些共同设计的LNAs在性能上有显着改善。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Chip-package co-design of common emitter LNA in system-on-package with on-chip versus off-chip passive component analysis
In this paper, we present common emitter LNAs (low noise amplifiers) in system-on-package for 5GHz WLAN application. Innovation of this module is that it is chip-package co-designed and co-simulated with performance trade-offs for on-chip versus off-chip passive component integration. It thus provides an optimal total solution for embedded RF electronics in system-level integration. Analytical equations for key performance parameters, noise figure and gain, of these LNAs are developed as functions of quality factors of passive components and the package parasitics. They hence provide designers a quantitative trade-off for on-chip versus off chip passive components integration in Sod design. The final module is composed of on-chip active components in 0.5/spl mu/m SiGe BiCMOS technology and off-chip passive components integrated in MCM-D substrate. Significant improvement in performance is found in these co-designed LNAs than those in single-chip LNAs.
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