绝缘子反表面闪络机理的研究

Zhenjun Zhang, Yufeng Chen, Ying Lin
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Results showed that there is a phenomenon in which a reverse flashover current sometimes occurs in the surface flashover process. The reverse flashover current pulse may occur in both the initial pre-flashover phase and the flashover breakdown phase, that is, when the flashover current pulse is positive, the surface flashover voltage is negative. The experiments results can be explained as follows. The electrons injection phenomenon near the cathode and holes injection phenomenon simultaneously near the anode are formed in the high electric field intensity at the triple junction (cathode end, vacuum and dielectric surface, CTJ). The electron-hole pairs migrate to the anode and cathode in the applied electric field intensity, respectively. Some of the carriers in the migration are captured by the trap center, forming the positive and negative charge trapping center. The region between the trap center and the electrodes will form an additive electric field. The negative charge trapping center weaken the local region electric field between cathode and negative charge, forming a reverse electric field to limit further injection of charge. At the same time, the trapping center enhanced the additive electric field between the anode and the trapping center. The region of the space charge electric field formed by the center of the negative charge is completely opposite to the applied electric field. When the negative charge trapping center value is sufficiently deep, the reverse additive electric field intensity will reach a critical of flashover breakdown value in the region. The partial discharge usually cannot occur due to the weakening of the high external electric field intensity. However, the applied electric field intensity of the insulator is instantaneously reduced during the surface flashover breakdown. 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引用次数: 0

摘要

了解真空条件下绝缘子材料表面闪络特性的机理,对避免敏感元件表面放电具有重要意义。学术界有两种具有主导地位和高度重组的模式。一种是二次电子发射雪崩模型(SEEA),另一种是电子触发极性弛豫模型(EPTR)。然而,目前还没有一个模型能够完全解释真空中所有的表面闪络现象,特别是反表面闪络现象。本文在真空条件下对绝缘子的直流表面闪络进行了实验研究,揭示了绝缘子的反表面闪络机理。结果表明,在表面闪络过程中有时会出现反向闪络电流的现象。逆闪络电流脉冲既可能出现在闪络初始预阶段,也可能出现在闪络击穿阶段,即闪络电流脉冲为正时,表面闪络电压为负。实验结果可以解释如下:在高电场强度的三重结(阴极端、真空和介电面,CTJ)处,在阴极附近形成电子注入现象,在阳极附近同时形成空穴注入现象。在外加电场强度下,电子-空穴对分别向阳极和阴极迁移。迁移中的一些载流子被捕获中心捕获,形成正电荷和负电荷捕获中心。阱中心和电极之间的区域将形成一个加性电场。负电荷捕获中心削弱了阴极和负电荷之间的局部区域电场,形成了一个反向电场,限制了电荷的进一步注入。同时,俘获中心增强了阳极与俘获中心之间的外加电场。负电荷中心形成的空间电荷电场区域与外加电场完全相反。当负电荷俘获中心值足够深时,反向加性电场强度将在该区域达到闪络击穿的临界值。由于高外加电场强度的减弱,通常不会发生局部放电。然而,在表面闪络击穿过程中,绝缘子的外加电场强度会瞬间降低。同时,在俘获中心的电子不脱陷,因此阴极和俘获中心反向的电场强度会迅速上升。当电场强度达到临界击穿值时,立即形成反向局部放电。与通常情况不同的是,在此过程中,电子会在反向电场强度的作用下从俘获中心逸出,向阴极转移,形成反向表面闪络电流脉冲。在闪络过程中,通常在外加电场强度较低时产生反向闪络电流脉冲。结果表明,陷阱对真空直流电压下反表面闪络性能的影响至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study on the Mechanism of Reverse Surface Flashover of Insulators
It is very important to understand the mechanism of surface flashover characteristics of the insulator materials in vacuum in order to avoid the surface discharge of sensitive components. There are two models with dominant roles and highly reorganization in academic circle. One is secondary electron emission avalanche model (SEEA) and the other is electron triggered polarity relaxation model (EPTR). However these models are still not understood clearly and there is no model which can completely explain all the phenomenon of surface flashover in vacuum, especially the reverse surface flashover phenomenon. In this paper, DC surface flashover experiments of insulator are studied in vacuum to reveal the reverse surface flashover mechanism. Results showed that there is a phenomenon in which a reverse flashover current sometimes occurs in the surface flashover process. The reverse flashover current pulse may occur in both the initial pre-flashover phase and the flashover breakdown phase, that is, when the flashover current pulse is positive, the surface flashover voltage is negative. The experiments results can be explained as follows. The electrons injection phenomenon near the cathode and holes injection phenomenon simultaneously near the anode are formed in the high electric field intensity at the triple junction (cathode end, vacuum and dielectric surface, CTJ). The electron-hole pairs migrate to the anode and cathode in the applied electric field intensity, respectively. Some of the carriers in the migration are captured by the trap center, forming the positive and negative charge trapping center. The region between the trap center and the electrodes will form an additive electric field. The negative charge trapping center weaken the local region electric field between cathode and negative charge, forming a reverse electric field to limit further injection of charge. At the same time, the trapping center enhanced the additive electric field between the anode and the trapping center. The region of the space charge electric field formed by the center of the negative charge is completely opposite to the applied electric field. When the negative charge trapping center value is sufficiently deep, the reverse additive electric field intensity will reach a critical of flashover breakdown value in the region. The partial discharge usually cannot occur due to the weakening of the high external electric field intensity. However, the applied electric field intensity of the insulator is instantaneously reduced during the surface flashover breakdown. At the same time, the electrons in the trapping center are not detrapping, so the electric field intensity of the reverse in the cathode and trapping center will rise rapidly. As a consequence of the electric field intensity reaching the critical breakdown value, a reverse partial discharge is formed immediately. Unlike the usual case, the electrons will escape from trapping center and transfer towards cathode under the action of reverse electric field intensity in the process, forming a reverse surface flashover current pulse. The reverse flashover current pulse typically occurs at a time when the applied electric field intensity value is low in the flashover process. It is suggest that the traps will play a critical role in affecting the reverse surface flashover performance under DC voltage in vacuum.
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