A 900 MHz 10 mW monolithically integrated inverse class E power amplifier

This work demonstrates a new integrated inverse class E amplifier circuit, employing a pHEMT switching device and fully integrated output network for pulse shaping. The circuit is particularly suitable for full integration, since it does not need any RF choke for biasing, and no DC blocking capacitor is needed between the switch and the output network parallel resonance circuit. The back plate capacitances of the additional capacitors are not connected to nodes that carry RF voltage signals. A commercial GaAs monolithic microwave integrated circuit process was used for fabricating the prototype circuit. 11.5 mW output power and 39% drain efficiency with 0.9 V supply voltage was measured at 895 MHz operating frequency. The output power remains over 10mW across 850–925 MHz, and the drain efficiency remains above 32% across this frequency range.