Nb2O5和OTS忆阻器的随机时延分析

2021 IEEE 4th International Conference on Information Systems and Computer Aided Education (ICISCAE) Pub Date : 2021-09-24 DOI:10.1109/ICISCAE52414.2021.9590725

Zhong Ma, Hongqi Yu, Shiqing Zhang, Yi Sun, Jietao Diao, Day-Uei Li

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引用次数: 1

摘要

忆阻器具有良好的延展性和低功耗。它们在逻辑电路、神经形态计算和非易失性存储器中有着广泛的应用。忆阻器在真随机数生成(TRNG)中显示出巨大的潜力。为了验证忆阻器的随机性，我们制作了两种忆阻器，测量了它们延迟的随机性，并研究了它们不同的随机性机制。我们做了数千次实验，验证了使用这两种忆阻器制作新的TRNG的可行性。我们还发现了忆阻器在非线性器件中的新应用。

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Random time delay analysis of Nb2O5 and OTS memristors

Memristors show excellent ductility and low power consumption. They have broad applications in logic circuits, neuromorphic computing and non-volatile memory. Memristors show great potential in true random number generation (TRNG). To verify memristors' randomness, we made two kinds of memristors, measured the randomness of their delays, and investigated their different randomness mechanisms. We did thousands of experiments and verified the feasibility of making a new TRNG using these two kinds of memristors. We also found a new application of memristors to make non-linear device.

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2021 IEEE 4th International Conference on Information Systems and Computer Aided Education (ICISCAE)

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